Si–Zr–C–N-based hydrophobic plasma polymer membranes for small gas molecule separation

• Published in: Thin solid films Vol. 527; pp. 87 - 91
• Main Authors: Chareyre, L., Cerneaux, S., Cornu, D., Rouessac, V.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.01.2013; Elsevier
• Subjects: Chemical Sciences; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Deposition; Engineering Sciences; Exact sciences and technology; Hydrogen; Infrared spectroscopy; Instruments, apparatus, components and techniques common to several branches of physics and astronomy; Material chemistry; Materials science; Membranes; Methods of deposition of films and coatings; film growth and epitaxy; Optical instruments, equipment and techniques; Physics; Plasma enhanced chemical vapor deposition; Plasmas; Polarimeters and ellipsometers; Reluctance; Selectivity; Separation; Separation membrane; Silicon zirconium carbonitride; Single source precursor; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Thin films; Silicon zirconium carbonitride; Single source precursor; Hydrogen; Plasma-enhanced chemical vapor deposition; Separation membrane; Scanning electron microscopy; Infrared spectroscopy; Selectivity; Precursor; Ellipsometry; Thin films; Zirconium; Carbonitrides; Silicon; PECVD; Polymers; Hydrogen Separation membrane Single source precursor Silicon zirconium carbonitride Plasma-enhanced chemical vapor deposition
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2012.12.004

Si–Zr–C–N membranes were studied for an application of hydrogen separation at high temperature. The synthesis of single-source molecular precursor incorporating four elements Si, Zr, C and N in the same molecule has been developed leading to a volatile compound that can be deposited in a gaseous way by plasma enhanced chemical vapor deposition. The obtained thin films were characterized by scanning electron microscopy, infrared spectroscopy and ellipsometry. Gas permeation tests were also performed to determine their performance in terms of permeance and selectivity. A helium permeance of about 4.5.10−8molm−2s−1Pa−1 and an ideal selectivity α* He/N2 around 60 have been obtained at 150°C with a transmembrane pressure of 105Pa. ► A Si–Zr–C–N single source molecular precursor is proposed. ► Plasma enhanced chemical vapor deposition was used to prepare a thin membrane. ► Smooth and uniform layer was obtained on a γ-alumina porous support. ► Membranes presented a good stability up to 350°C. ► Si–Zr–C–N membranes showed good performances in gas separation.