A review of the techniques used for modeling single-event effects in power MOSFETs

Heavy ions can trigger catastrophic failure modes in power metal-oxide-semiconductor field-effect transistors (MOSFETs). Single-event effects (SEE), namely, single-event burnout (SEB), and single-event gate rupture (SEGR), of power MOSFETs are catastrophic failure mechanisms that are initiated by th...

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Bibliographic Details
Published inIEEE transactions on nuclear science Vol. 43; no. 2; pp. 546 - 560
Main Authors Johnson, G.H., Palau, J.M., Dachs, C., Galloway, K.F., Schrimpf, R.D.
Format Journal Article
LanguageEnglish
Published IEEE 01.04.1996
Subjects
Analytical models
Dielectric breakdown
Failure analysis
Feedback
FETs
MOSFET circuits
Neck
Power MOSFET
Protons
Vents
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Summary:Heavy ions can trigger catastrophic failure modes in power metal-oxide-semiconductor field-effect transistors (MOSFETs). Single-event effects (SEE), namely, single-event burnout (SEB), and single-event gate rupture (SEGR), of power MOSFETs are catastrophic failure mechanisms that are initiated by the passage of a heavy ion through the device structure. Various analytical, semianalytical, and simulation models have been developed to help explain these phenomena. This paper presents a review of these models and explains their merits and limitations. New results are included to illustrate the approaches.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9499
1558-1578
DOI:10.1109/23.490900