Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate

• Published in: IEEE electron device letters Vol. 31; no. 3; pp. 192 - 194
• Main Authors: IM, Ki-Sik, HA, Jong-Bong, KIM, Ki-Won, LEE, Jong-Sub, KIM, Dong-Seok, HAHM, Sung-Ho, LEE, Jung-Hee
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.03.2010; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: 2-D electron gas (2DEG); Aluminum gallium nitride; Aluminum gallium nitrides; Applied sciences; Compound structure devices; Density; Devices; Drains; Electronics; Electrons; Exact sciences and technology; Gallium nitride; Gallium nitrides; GaN; Heterostructures; MOSFET circuits; MOSFETs; normally off; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; silicon substrate; Silicon substrates; Stress control; Switching circuits; Tensile stress; Threshold voltage; Transconductance; Transistors; Performance evaluation; Voltage threshold; MOSFET; High density; Dielectric materials; Two-dimensional electron gas; 2-D electron gas (2DEG); MOSFETs; normally off; Tensile stress; GaN; Drain current; Electron density; Heterostructures; Transconductance; Electron gas; silicon substrate
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2009.2039024

A normally off GaN MOSFET was proposed by utilizing an extremely high 2-D electron-gas density (> 10 14 / cm 2 ) at an AlGaN/GaN heterostructure as source and drain, which can be obtained by controlling the tensile stress accompanied with the growth of GaN on silicon substrate. The fabricated MOSFET with an Al 2 O 3 gate insulator exhibited excellent device performance, such as a threshold voltage of 2 V, drain current of 353 mA/mm, extrinsic transconductance of 98 mS/mm, and field-effect mobility of 225 cm 2 /V·s.