Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs

• Published in: Micromachines (Basel) Vol. 12; no. 2; p. 199
• Main Authors: Wang, Jie, Chen, Zhanfei, You, Shuzhen, Bakeroot, Benoit, Liu, Jun, Decoutere, Stefaan
• Format: Journal Article
• Language: English
• Published: Switzerland MDPI AG 15.02.2021; MDPI
• Subjects: compact model; Diffusion layers; Diodes; Gallium nitrides; High electron mobility transistors; p-GaN gate high-electron mobility transistors; Physical properties; Physics; physics-based models; Poisson equation; Semiconductor devices; surface potential; Transistors; surface potential; physics-based models; p-GaN gate high-electron mobility transistors; compact model
• ISSN: 2072-666X; 2072-666X
• DOI: 10.3390/mi12020199

We propose a surface potential (SP)-based compact model of p-GaN gate high electron mobility transistors (HEMTs) which solves the Poisson equation. The model includes all possible charges in the GaN channel layer, including the unintended Mg doping density caused by out-diffusion. The SP equation and its analytical approximate solution provide a high degree of accuracy for the SP calculation, from which the closed-form I-V equations are derived. The proposed model uses physical parameters only and is implemented in Verilog-A code.