The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review

Silicon carbide (SiC) is one of the most promising materials for applications in harsh environments thanks to its excellent electrical, mechanical, and chemical properties. The piezoresistive effect of SiC has recently attracted a great deal of interest for sensing devices in hostile conditions. Thi...

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Published inJournal of microelectromechanical systems Vol. 24; no. 6; pp. 1663 - 1677
Main Authors Hoang-Phuong Phan, Dao, Dzung Viet, Nakamura, Koichi, Dimitrijev, Sima, Nam-Trung Nguyen
Format Journal Article
LanguageEnglish
Published New York IEEE 01.12.2015
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
harsh environments
microelectromechanical systems (MEMS)
Micromechanical devices
Piezoresistance
piezoresistive effect
Silicon
Silicon carbide
Temperature
Temperature sensors
piezoresistive effect
Silicon carbide
piezoresistance
harsh environments
microelectromechanical systems (MEMS)
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Summary:Silicon carbide (SiC) is one of the most promising materials for applications in harsh environments thanks to its excellent electrical, mechanical, and chemical properties. The piezoresistive effect of SiC has recently attracted a great deal of interest for sensing devices in hostile conditions. This paper reviews the piezoresistive effect of SiC for mechanical sensors used at elevated temperatures. We present experimental results of the gauge factors obtained for various poly-types of SiC films and SiC nanowires, the related theoretical analysis, and an overview on the development of SiC piezoresistive transducers. The review also discusses the current issues and the potential applications of the piezoresistive effect in SiC.
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ISSN:1057-7157
1941-0158
DOI:10.1109/JMEMS.2015.2470132