The effect of the physico-chemical properties of cellulosic polymers on the Si wafer polishing process

• Published in: Journal of electroceramics Vol. 17; no. 2-4; pp. 835 - 839
• Main Authors: KIM, Sang-Kyun, KIM, Ye-Hwan, PAIK, Ungyu, KATOH, Takeo, PARK, Jea-Gun
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Heidelberg Springer 01.12.2006; Springer Nature B.V
• Subjects: Affinity; Applied sciences; Ceramics; Electronics; Exact sciences and technology; Microelectronic fabrication (materials and surfaces technology); Polishing; Polymers; R&D; Research & development; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; Surface chemistry; Surface roughness; Wafers; Cellulose(carboxymethyl); Roughness; CMP Wafer polishing process Cellulosic polymers Micro scratch Topography; Experimental study; Polyelectrolyte; Wettability; Colloidal suspension; Cellulose derivatives; Surface properties; Polyacid; Silicon; Chemical mechanical polishing; Cellulose ether; Cellulose(hydroxyethyl); Wafer
• ISSN: 1385-3449; 1573-8663
• DOI: 10.1007/s10832-006-9334-1

Cellulosic polymers were used as organic additives to reduce the wafer surface roughness during the polishing process. The physico-chemical affinity of the polymer for the wafer and the formation of a hydro-plane on the Si wafer surface were investigated to identify the role of the polymeric additives in the wafer-polishing process. Two different polymers, hydroxyethyl cellulose (HEC) and carboxymethyl cellulose (CMC), were employed as a surface modifier for the wafer. The wettability of the Si surface varied markedly between the different suspensions prepared with HEC and CMC due to different adsorptive behaviors. As a result, the suspension prepared with HEC reduced the haze level and micro-roughness of the wafer, enhancing overall polishing performance.