Effect of water vapor on the growth of aluminum oxide films by low pressure chemical vapor deposition

• Published in: Thin solid films Vol. 230; no. 2; pp. 156 - 159
• Main Authors: Kim, J.S., Marzouk, H.A., Reucroft, P.J., Robertson, J.D., Hamrin, C.E.
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 10.08.1993; Elsevier Science
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Thermal factor; Growth rate; Oxide layer; Aluminium compounds; Organometallic compounds; Roughness; Experimental study; Water vapor; Chemical vapor deposition; Surface states; Ellipsometry; Thin films; Aluminium Oxides; Vapor deposition; Rutherford backscattering; Growth mechanism; Arrhenius equation; Auger electron spectroscopy
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/0040-6090(93)90509-N

Low pressure chemical vapor deposition of aluminum oxide films from aluminum acetylacetonate and water vapor has been investigated. Water vapor played an important role in the film growth kinetics, film purity, and the surface morphology of the grown films. High water vapor pressures produced ligand-free pure Al 2O 3 films with a smooth surface even at a substrate temperature of 230 °C.