Dynamic Compact Model of Self-Referenced Magnetic Tunnel Junction

Self-referenced magnetic tunnel junction (SR-MTJ) is a magnetic device that offers better characteristics when compared with its contenders. In this paper, electrical behavior of SR-MTJ was modeled using Verilog-AMS language based on reformulated magnetic physical equations. In addition, it incorpor...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 61; no. 11; pp. 3877 - 3882
Main Authors Azevedo, Joao, Virazel, Arnaud, Bosio, Alberto, Dilillo, Luigi, Girard, Patrick, Alvarez-Herault, Jeremy, Mackay, Ken
Format Journal Article
LanguageEnglish
Published New York IEEE 01.11.2014
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Institute of Electrical and Electronics Engineers
Subjects
Computer simulation
Electric potential
Engineering Sciences
Frequency modulation
Heating
Hysteresis
Macro model
Magnetic devices
Magnetic switching
magnetic tunnel junction (MTJ)
Magnetic tunneling
Magnetization
Mathematical analysis
Mathematical model
Micro and nanotechnologies
Microelectronics
self-referenced MTJ (SR-MTJ)
Strontium
Switches
Tunnel junctions
Voltage
Macro model
magnetic tunnel junction (MTJ)
self-referenced MTJ (SR-MTJ)
bias voltage
Frequency modulation
Magnetization
Switches
Magnetic switching
SR-MTJ
magnetic device
magnetic physical equations
magnetic devices
sample and hold circuits
magnetic tunnelling
self-referenced magnetic tunnel junction
Heating
magnetoelectronics
Mathematical model
Verilog-AMS language
Magnetic tunneling
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Summary:Self-referenced magnetic tunnel junction (SR-MTJ) is a magnetic device that offers better characteristics when compared with its contenders. In this paper, electrical behavior of SR-MTJ was modeled using Verilog-AMS language based on reformulated magnetic physical equations. In addition, it incorporates all major characteristics of an MTJ, such as hysteresis and dependence of the resistance with respect to bias voltage and temperature. The model was designed to consider SR read approach and two modes of writing, direct and indirect. Electrical simulations were performed on an SR-MTJ enabling any read/write operation sequences. Results show that sample and hold read approach and both write modes were achieved.
Bibliography:ObjectType-Article-1
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ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2014.2355418