Structure of TiN films deposited on heated and negatively biased silicon substrates

• Published in: Thin solid films Vol. 215; no. 1; pp. 8 - 13
• Main Authors: Mahéo, D., Poitevin, J.M.
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 30.07.1992; Elsevier Science
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Solid surfaces and solid-solid interfaces; Surface and interface dynamics and vibrations; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Titanium Nitrides; Electrical conductivity; Internal stress; Lattice distortion; Impurity; Bias voltage; Preparation; Experimental study; Lattice parameters; X ray diffraction; Inorganic compound; Thin film
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/0040-6090(92)90693-6

The structure of TiN films has been studied by X-ray diffraction. The silicon substrates were heated and negatively biased during deposition, the bias voltage was varied between 0 and −200 V and the temperature between 150 and 900°C. The variations in the lattice parameter are correlated with oxygen-to-titanium and argon-to-titanium ratios. Oxygen and argon impurities seem to be the main reasons for the stress and the lattice distortion, a low value of the impurity content being correlated with a low value of the lattice distortion. However, our results show that other reasons may be involved, such as structural damage or mismatches between the film and the substrate.