A dissociation mechanism for the [a+c] dislocation in GaN

Mixed-type [a+c] dislocations can be identified in atomic-resolution high-angle annular dark-field scanning transmission electron microscope images of GaN viewed along [0001] by use of a Burgers loop analysis and by observation of the depth-dependent displacements associated with the Eshelby twist....

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Published inJournal of physics. Conference series Vol. 522; no. 1; pp. 12037 - 4
Main Authors Nellist, P D, Hirsch, P B, Rhode, S, Horton, M K, Lozano, J G, Yasuhara, A, Okunishi, E, Zhang, S, Sahonta, S-L, Kappers, M J, Humphreys, C J, Moram, M A
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 11.06.2014
Subjects
Bonding
Dislocation loops
Dislocations
Faults
Gallium nitrides
Glide
Image transmission
Microscopes
Physics
Scanning electron microscopy
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Summary:Mixed-type [a+c] dislocations can be identified in atomic-resolution high-angle annular dark-field scanning transmission electron microscope images of GaN viewed along [0001] by use of a Burgers loop analysis and by observation of the depth-dependent displacements associated with the Eshelby twist. These dislocations are found to be able to dissociate resulting in a fault that lies perpendicular to the dislocation glide plane. Consideration of the bonding that occurs in such a fault allows the dissociation reaction to be proposed, and the proposed fault agrees with the experimental images when kinks are incorporated into the model.
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ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/522/1/012037