Annealing effects on the optical and electrochemical properties of tantalum pentoxide films

Tantalum pentoxide (Ta 2 O 5 ) has attracted intensive attention due to their excellent physicochemical properties. Ta 2 O 5 films were synthesized via electron beam evaporation (EBE) and subsequently annealed at different temperatures ranging from 300 to 900 °C. X-ray diffraction (XRD) results show...

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Published inJournal of advanced ceramics Vol. 10; no. 4; pp. 704 - 713
Main Authors Ren, Wei, Yang, Guang-Dao, Feng, Ai-Ling, Miao, Rui-Xia, Xia, Jun-Bo, Wang, Yong-Gang
Format Journal Article
LanguageEnglish
Published Beijing Tsinghua University Press 01.08.2021
Springer
School of Science & School of Electronic Engineering,Xi 'an University of Posts &Telecommunications,Xi 'an 710121,China%School of Physics and Information Technology,Shaanxi Normal University,Xi 'an 710119,China%Institute of Physics & Optoelectronics Technology,Baoji University of Arts and Sciences,Baoji 721016,China
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Summary:Tantalum pentoxide (Ta 2 O 5 ) has attracted intensive attention due to their excellent physicochemical properties. Ta 2 O 5 films were synthesized via electron beam evaporation (EBE) and subsequently annealed at different temperatures ranging from 300 to 900 °C. X-ray diffraction (XRD) results show that amorphous Ta 2 O 5 thin films form from 300 to 700 °C and then a phase transition to polycrystalline β-Ta 2 O 5 films occurs since 900 °C. The surface morphology of the Ta 2 O 5 films is uniform and smooth. The resulted Ta 2 O 5 films exhibit excellent transmittance properties for wavelengths ranging from 300 to 1100 nm. The bandgap of the Ta 2 O 5 films is broadened from 4.32 to 4.46 eV by annealing. The 900 °C polycrystalline film electrode has improved electrochemical stability, compared to the other amorphous counterparts.
Bibliography:ObjectType-Article-1
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ISSN:2226-4108
2227-8508
DOI:10.1007/s40145-021-0465-2