Annealing effects on the optical and electrochemical properties of tantalum pentoxide films
Tantalum pentoxide (Ta 2 O 5 ) has attracted intensive attention due to their excellent physicochemical properties. Ta 2 O 5 films were synthesized via electron beam evaporation (EBE) and subsequently annealed at different temperatures ranging from 300 to 900 °C. X-ray diffraction (XRD) results show...
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Published in | Journal of advanced ceramics Vol. 10; no. 4; pp. 704 - 713 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Beijing
Tsinghua University Press
01.08.2021
Springer School of Science & School of Electronic Engineering,Xi 'an University of Posts &Telecommunications,Xi 'an 710121,China%School of Physics and Information Technology,Shaanxi Normal University,Xi 'an 710119,China%Institute of Physics & Optoelectronics Technology,Baoji University of Arts and Sciences,Baoji 721016,China |
Subjects | |
Online Access | Get full text |
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Summary: | Tantalum pentoxide (Ta
2
O
5
) has attracted intensive attention due to their excellent physicochemical properties. Ta
2
O
5
films were synthesized via electron beam evaporation (EBE) and subsequently annealed at different temperatures ranging from 300 to 900 °C. X-ray diffraction (XRD) results show that amorphous Ta
2
O
5
thin films form from 300 to 700 °C and then a phase transition to polycrystalline β-Ta
2
O
5
films occurs since 900 °C. The surface morphology of the Ta
2
O
5
films is uniform and smooth. The resulted Ta
2
O
5
films exhibit excellent transmittance properties for wavelengths ranging from 300 to 1100 nm. The bandgap of the Ta
2
O
5
films is broadened from 4.32 to 4.46 eV by annealing. The 900 °C polycrystalline film electrode has improved electrochemical stability, compared to the other amorphous counterparts. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 |
ISSN: | 2226-4108 2227-8508 |
DOI: | 10.1007/s40145-021-0465-2 |