Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction

• Published in: AIP advances Vol. 3; no. 7; p. 072112
• Main Authors: Zeng, Zhaoquan, Morgan, Timothy A., Fan, Dongsheng, Li, Chen, Hirono, Yusuke, Hu, Xian, Zhao, Yanfei, Lee, Joon Sue, Wang, Jian, Wang, Zhiming M., Yu, Shuiqing, Hawkridge, Michael E., Benamara, Mourad, Salamo, Gregory J.
• Format: Journal Article
• Language: English
• Published: AIP Publishing LLC 01.07.2013
• Subjects: Gallium arsenide; Gallium arsenides; Insulators; Molecular beam epitaxy; Optoelectronic devices; P-n junctions; Semiconductors; Topology
• ISSN: 2158-3226; 2158-3226
• DOI: 10.1063/1.4815972

High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films. Hall and magnetoresistance measurements indicate that p type Sb2Te3 and n type Bi2Te3 topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.