Determination of energetic distribution of interface states between gate metal and semiconductor in sub-micron devices from current-voltage characteristics

• Published in: IEEE transactions on electron devices Vol. 47; no. 2; pp. 282 - 287
• Main Authors: Dhar, S., Balakrishman, V.R., Kumar, V., Ghosh, S.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.02.2000; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Bias; Density; Devices; Gallium arsenide; Gates; Interface phenomena; Mathematical models; Semiconductors; Volt-ampere characteristics
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/16.822268

Density and energetic distributions of interface states between metal-semiconductor rectifying contacts in sub-micron GaAs MESFET and AlGaAs/InGaAs pseudomorphic high electron mobility transistors (HEMT's) have been studied. Electrical properties of the interface states between gate metal and semiconductor in sub-micron devices depend on growth technique, associated processing parameters and surface states on III-V semiconductors. Correlation between nonideal current-voltage (I-V) characteristics and interface states has been established through the bias dependence of ideality factor. Ideality factor determined from I-V characteristics of MESFET and HEMT increases with bias and then decreases after reaching a maximum. A theoretical model based on nonequilibrium approach has been used to determine the density of interface states and their energetic distribution from ideality factor. Essentially, Fermi level shifts with applied bias and Schottky barrier height changes due to trapping and detrapping of electrons by the interface states, and from these changes, density of interface states and their energetic distributions have been determined.