Detailed analysis and performance limiting mechanism of Si delta-doped GaAs tunnel diode grown by MBE

High-performance GaAs tunnel diodes (TDs) are fabricated by using Si delta-doping technique. The GaAs TDs exhibited a high peak tunnel-current density of 2,735 A/cm2 and low specific resistivity of 1.46 × 10−4 Ω·cm2. However, the performance of the GaAs TDs deteriorated once the amount of Si delta d...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 57; no. 12; pp. 120306 - 120310
Main Authors Kang, Seokjin, Ju, Gun Wu, Min, Jung-Wook, Lee, Dong-Seon, Lee, Yong Tak, Kim, Hyo Jin, Park, Kwangwook
Format Journal Article
LanguageEnglish
Published Tokyo The Japan Society of Applied Physics 01.12.2018
Japanese Journal of Applied Physics
Japan Society of Applied Physics
Subjects
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Computer simulation
Doping
gallium arsenide
III-V semiconductors
Photovoltaic cells
semiconducting gallium
Silicon
Solar cells
Tunnel diodes
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Summary:High-performance GaAs tunnel diodes (TDs) are fabricated by using Si delta-doping technique. The GaAs TDs exhibited a high peak tunnel-current density of 2,735 A/cm2 and low specific resistivity of 1.46 × 10−4 Ω·cm2. However, the performance of the GaAs TDs deteriorated once the amount of Si delta doping exceeded a certain limit, which has been rarely reported elsewhere. Detailed analyses and numerical simulations of GaAs TDs with various amounts of Si delta doping prove that Si amphoteric behavior governs the performance limit. GaAs TDs with precisely controlled Si delta doping are suitable for cutting-edge tandem solar cell applications.
Bibliography:AC36-08GO28308
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
NREL/JA-5K00-72972
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.57.120306