Instability of one-dimensional dangling-bond wires on H-passivated C(001), Si(001), and Ge(001) surfaces

We investigate the instability of one-dimensional dangling-bond (DB) wires fabricated on the H-terminated C(001), Si(001), and Ge(001) surfaces by using density-functional theory calculations. The three DB wires are found to show drastically different couplings between charge, spin, and lattice degr...

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Bibliographic Details
Published inSurface science Vol. 605; no. 7; pp. L13 - L15
Main Authors Lee, Jun-Ho, Cho, Jun-Hyung
Format Journal Article
LanguageEnglish
Published Kidlington Elsevier B.V 01.04.2011
Elsevier
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Summary:We investigate the instability of one-dimensional dangling-bond (DB) wires fabricated on the H-terminated C(001), Si(001), and Ge(001) surfaces by using density-functional theory calculations. The three DB wires are found to show drastically different couplings between charge, spin, and lattice degrees of freedom, resulting in an insulating ground state. The C DB wire has an antiferromagnetic spin coupling between unpaired DB electrons, caused by strong electron–electron interactions, whereas the Ge DB wire has a strong charge-lattice coupling, yielding a Peierls-like lattice distortion. For the Si DB wire, the antiferromagnetic spin ordering and the Peierls instability are highly competing with each other. The physical origin of such disparate features in the three DB wires can be traced to the different degree of localization of 2 p, 3 p, and 4 p DB orbitals. ► One-dimensional dangling-bond wires fabricated on C(001), Si(001), and Ge(001) surfaces. ► Peierls instability or spin ordering in one-dimensional wires. ► The C wire has an antiferromagnetic spin ordering. ► The Ge wire has a Peierls-like lattice distortion.
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content type line 23
ISSN:0039-6028
1879-2758
DOI:10.1016/j.susc.2011.01.011