Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction

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Bibliographic Details
Published in	New journal of physics Vol. 9; no. 10; p. 389
Main Authors	Dadgar, A, Schulze, F, Wienecke, M, Gadanecz, A, Bläsing, J, Veit, P, Hempel, T, Diez, A, Christen, J, Krost, A
Format	Journal Article
Language	English
Published	IOP Publishing 31.10.2007
Online Access	Get full text

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ISSN:	1367-2630 1367-2630
DOI:	10.1088/1367-2630/9/10/389