Conductivity, carrier density, mobility, Seebeck coefficient, and power factor in V2O5

• Published in: Thermochimica acta Vol. 576; pp. 71 - 74
• Main Authors: Kang, Manil, Jung, Juho, Lee, Sung-Young, Ryu, Ji-Wook, Kim, Sok Won
• Format: Journal Article
• Language: English; Dutch
• Published: Elsevier B.V 01.01.2014
• Subjects: Boundaries; Carrier density; Carrier mobility; Coefficients; Crystal structure; Crystallization; Electrical conductivity; Power factor; Resistivity; Seebeck coefficient; V2O5 thin film; Vanadium pentoxide; Seebeck coefficient; V2O5 thin film; Electrical conductivity; Power factor; Carrier mobility
• ISSN: 0040-6031; 1872-762X
• DOI: 10.1016/j.tca.2013.11.026

•We investigated the thermophysical properties of the V2O5 films with crystallization.•The electrical properties showed a strong dependence on the crystallization.•The mobility was inversely proportional to temperature and crystallization.•The Seebeck coefficients of the V2O5 films were negative.•The coefficients showed a stronger dependence on crystallization than temperature. The thermophysical properties of V2O5 films as functions of temperature and crystallization are investigated and characterized by measuring the Hall and Seebeck coefficients. The carrier density and electrical conductivity of the amorphous and crystalline V2O5 films increase with increasing temperature and show a strong dependence on the crystallization. However, the carrier mobility of the films is inversely proportional to temperature and crystallization due to increased carrier scattering in terms of the thermal phonon and boundaries by the crystallites. The Seebeck coefficients of the films are negative, indicating n-type conduction, and show a stronger dependence on crystallization than temperature. In particular, the crystalline V2O5 film demonstrates considerably large Seebeck coefficients in the range of −385 to −436μVK−1 from 300 to 410K. Both power factors of the films are calculated to be 5.76×10−9 and 3.12×10−7Wm−1K−2 at 410K, respectively.