Molecular simulation of pattern formation in electron beam lithography

• Published in: Microelectronic engineering Vol. 112; pp. 287 - 290
• Main Authors: Yasuda, Masaaki, Sakai, Hirofumi, Takai, Rina, Kawata, Hiroaki, Hirai, Yoshihiko
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.12.2013
• Subjects: Atomic structure; Electron beam lithography; Line edge roughness; Lithography; Molecular dynamics; Molecular structure; PMMA; Polymethyl methacrylates; Resists; Roughness; Simulation; Molecular dynamics; Line edge roughness; PMMA; Electron beam lithography
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2013.03.119

•Molecular simulation of electron beam lithography is performed.•The effect of electron exposure is introduced by chain scission of polymer molecules.•The small segments of polymer molecules are removed in the development process.•The typical structure of atomic scale line edge roughness is revealed.•Electron scattering is dominant for determining the atomic scale line edge roughness. We performed molecular simulation to investigate the pattern formation in electron beam lithography. We introduced the effect of electron exposure by the chain scission of the polymer molecules. In the development process, the small segments of polymer molecules are removed from the resist structure. Our present simulation reveals the typical structure of atomic scale line edge roughness, i.e., the prominences of a molecular chain superimposed on an undulating molecular network. It also indicates that electron scattering in the resist is more dominant for determining the line edge roughness than the molecular behavior for PMMA resist even in atomic scale lithography.