pn junction formation by Si paste coated on metal substrates

In this work, p- and n-type Si pastes were prepared in a way by utilizing a planetary ball miller to pulverize Si source material. pn homojunction was formed by coating Si pastes onto metal substrates, followed by annealing under Ar or Ar + H 2 atmosphere. The optimal annealing temperature was found...

Full description

Saved in:
Bibliographic Details
Published inJournal of materials science. Materials in electronics Vol. 30; no. 7; pp. 6693 - 6700
Main Authors Li, Yan, Inokuchi, Hiroshi, Orita, Takahiro, Maejima, Kunihiko, Nakashima, Kensuke, Ooue, Satoshi, Matsumoto, Hiroshige, Kato, Yoshimine
Format Journal Article
LanguageEnglish
Published New York Springer US 01.04.2019
Springer Nature B.V
Subjects
Annealing
Ball milling
Characterization and Evaluation of Materials
Chemistry and Materials Science
Homojunctions
Materials Science
Optical and Electronic Materials
P-n junctions
Pastes
Photovoltaic cells
Production costs
Silicon substrates
Solar cells
Online AccessGet full text

Cover

More Information
Summary:In this work, p- and n-type Si pastes were prepared in a way by utilizing a planetary ball miller to pulverize Si source material. pn homojunction was formed by coating Si pastes onto metal substrates, followed by annealing under Ar or Ar + H 2 atmosphere. The optimal annealing temperature was found to be around 1050 °C that exhibits the lowest resistivity. A typical rectifying property of diode with small photovoltaic was observed for the device fabricated. It is anticipated that Si pastes could have potential for low cost device fabrication such as solar cells. All Cz Si ingot growth procedures could be skipped, consequently it is expected that the manufacturing cost for solar cell can be greatly reduced.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-019-00980-3