Investigation of improved adhesion between Cu film and polyimide by the PSII-EIAMAD technique

Plasma source ion implantation (PSII) is a relatively simple and effective ion implantation/deposition technique for the surface modification of materials. In PSII, a substrate is immersed in the plasma, and negative, high‐voltage pulses are applied to accelerate ions into the substrate in order to...

Full description

Saved in:
Bibliographic Details
Published inSurface and interface analysis Vol. 38; no. 4; pp. 343 - 347
Main Authors Lee, Yeonhee, Hong, Ju Hi, Chun, Hyejin, Han, Seunghee
Format Journal Article Conference Proceeding
LanguageEnglish
Published Chichester, UK John Wiley & Sons, Ltd 01.04.2006
Wiley
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:Plasma source ion implantation (PSII) is a relatively simple and effective ion implantation/deposition technique for the surface modification of materials. In PSII, a substrate is immersed in the plasma, and negative, high‐voltage pulses are applied to accelerate ions into the substrate in order to modify the surface properties of materials. PSII technique combined with energetic ion‐assisted mixing and deposition (EIAMAD) was used to improve the adhesion between the Cu film and polyimide. Cu films processed with ion‐assisted mixing showed higher adhesion strength than that of not processed or plasma‐cleaned ones. Cu films on polyimide substrate were deposited by using different ion species to investigate the ion effect on the interface mixing. Argon ion bombardment led to more adhesive and gradient layers as a function of ion energy and ion dose. The adhesion strength was determined by the 90° peel test. The characterization of Cu‐deposited polyimide, generated with ion‐assisted mixing by PSII, was performed by AES, SEM, and AFM. Our results suggested that PSII‐EIAMAD was a very useful method to grow Cu films with good adhesion properties on polyimide at room temperature. Copyright © 2006 John Wiley & Sons, Ltd.
Bibliography:ArticleID:SIA2230
ark:/67375/WNG-GTM3LH2H-1
istex:307DA11E9184F302A93E6B070548F9427DCCAE3C
SourceType-Scholarly Journals-2
ObjectType-Feature-2
ObjectType-Conference Paper-1
content type line 23
SourceType-Conference Papers & Proceedings-1
ObjectType-Article-3
ISSN:0142-2421
1096-9918
DOI:10.1002/sia.2230