Ab-initio calculation of band alignments for opto-electronic simulations

A modified core-to-valence band maximum approach is applied to calculate band offsets of strained III/V semiconductor hetero junctions. The method is used for the analysis of (In,Ga)As/GaAs/Ga(As,Sb) multi-quantum well structures. The obtained offsets and the resulting bandstructure are used as inpu...

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Bibliographic Details
Published inAIP advances Vol. 9; no. 5; pp. 055328 - 055328-6
Main Authors Oelerich, Jan Oliver, Weseloh, Maria J., Volz, Kerstin, Koch, Stephan W.
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 01.05.2019
AIP Publishing LLC
Subjects
Group III-V semiconductors
Mathematical analysis
Multi Quantum Wells
Offsets
Optoelectronics
Photoluminescence
Valence band
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Summary:A modified core-to-valence band maximum approach is applied to calculate band offsets of strained III/V semiconductor hetero junctions. The method is used for the analysis of (In,Ga)As/GaAs/Ga(As,Sb) multi-quantum well structures. The obtained offsets and the resulting bandstructure are used as input for the microscopic calculation of photoluminescence spectra yielding very good agreement with recent experimental results.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.5087756