High performance MoS2 TFT using graphene contact first process

An ohmic contact of graphene/MoS2 heterostructure is determined by using ultraviolet photoelectron spectroscopy (UPS). Since graphene shows a great potential to replace metal contact, a direct comparison of Cr/Au contact and graphene contact on the MoS2 thin film transistor (TFT) is made. Different...

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Bibliographic Details
Published inAIP advances Vol. 7; no. 8; pp. 085018 - 085018-6
Main Authors Chang Chien, Chih-Shiang, Chang, Hsun-Ming, Lee, Wei-Ta, Tang, Ming-Ru, Wu, Chao-Hsin, Lee, Si-Chen
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 01.08.2017
AIP Publishing LLC
Subjects
Chromium
Contact potentials
Contact resistance
Gold
Graphene
Heterostructures
Molybdenum disulfide
Performance enhancement
Polymethyl methacrylate
Semiconductor devices
Thin film transistors
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Summary:An ohmic contact of graphene/MoS2 heterostructure is determined by using ultraviolet photoelectron spectroscopy (UPS). Since graphene shows a great potential to replace metal contact, a direct comparison of Cr/Au contact and graphene contact on the MoS2 thin film transistor (TFT) is made. Different from metal contacts, the work function of graphene can be modulated. As a result, the subthreshold swing can be improved. And when Vg<VFB, the intrinsic graphene changes into p-type, so graphene contact can achieve lower off current by lowering the Fermi level. To further improve the performance of MoS2 TFT, a new method using graphene contact first and MoS2 layer last process that can avoid PMMA residue and high processing temperature is applied. MoS2 TFT using this method shows on/off current ratio up to 6×106 order of magnitude, high mobility of 116 cm2/V-sec, and subthreshold swing of only 0.515 V/dec.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4996136