High performance nBn detectors based on InGaAsSb bulk materials for short wavelength infrared detection

• Published in: AIP advances Vol. 9; no. 10; pp. 105106 - 105106-5
• Main Authors: Li, Nong, Sun, Ju, Jia, Qingxuan, Song, Yifeng, Jiang, Dongwei, Wang, Guowei, Xu, Yingqiang, Niu, Zhichuan
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 01.10.2019; AIP Publishing LLC
• Subjects: Competitive materials; Cut off wavelength; Dark current; Efficiency; Energy gap; Quantum efficiency
• ISSN: 2158-3226; 2158-3226
• DOI: 10.1063/1.5124093

We report a low dark current, high quantum efficiency nBn photodetectors based on In0.28Ga0.72As0.25Sb0.75 bulk materials with a cut-off wavelength of 3μm at room temperature. Generation-Recombination current was suppressed using an nBn design to shift deplete region from In0.28Ga0.72As0.25Sb0.75 active region into a wide band gap AlGaSb barrier region. The Arrhenius plots of R0A-1/T show that there is no Generation-Recombination current detected in nBn device, whereas pin devices have a Generation-Recombination dominant dark current at temperatures ranging from 160K to 220K. Optical characterizations at 300K show the nBn device using InGaAsSb as an absorption material has a relative high quantum efficiency. The nBn device exhibits a peak specific detectivity of 4.8×1010 Jones under 200mV reverse bias voltage at 300K. The low dark current, high quantum efficiency and band gap tunability are expected to make InGaAsSb bulk material a competitive candidate for short wavelength infrared regime.