Impact of temperature-dependent series resistance on the operation of AlGaN/GaN high electron mobility transistors

AlGaN/GaN high electron mobility transistors (HEMTs) possess excellent electrical and thermal properties. In this study, we examined the electrical performance of AlGaN/GaN HEMTs to clarify the operational mechanism of the device with temperature variation in an effort to further advance development...

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Bibliographic Details
Published inAIP advances Vol. 11; no. 11; pp. 115203 - 115203-5
Main Authors Jeon, Dae-Young, Koh, Yumin, Cho, Chu-Young, Park, Kyung-Ho
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 01.11.2021
AIP Publishing LLC
Subjects
Aluminum gallium nitrides
Attenuation
Electronic devices
Gallium nitrides
High electron mobility transistors
Impact resistance
Rapid prototyping
Scattering
Semiconductor devices
Surface roughness
Temperature dependence
Temperature effects
Thermodynamic properties
Transistors
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Summary:AlGaN/GaN high electron mobility transistors (HEMTs) possess excellent electrical and thermal properties. In this study, we examined the electrical performance of AlGaN/GaN HEMTs to clarify the operational mechanism of the device with temperature variation in an effort to further advance development of high-speed, high-power devices and sensors for temperature applications. Our results revealed drain current degradation caused by temperature-dependent series resistance, as well as several scattering mechanisms. In addition, a negligible surface roughness scattering effect in AlGaN/GaN HEMTs was confirmed through mobility attenuation factors.
ISSN:2158-3226
2158-3226
DOI:10.1063/5.0064823