Tunneling-injection quantum-dot laser: ultrahigh temperature stability
We propose a genuinely temperature-insensitive quantum dot (QD) laser. Our approach is based on direct injection of carriers into the QDs, resulting in a strong depletion of minority carriers in the regions outside the QDs. Recombination in these regions, which is the dominant source of the temperat...
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Published in | IEEE journal of quantum electronics Vol. 37; no. 7; pp. 905 - 910 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.07.2001
Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | We propose a genuinely temperature-insensitive quantum dot (QD) laser. Our approach is based on direct injection of carriers into the QDs, resulting in a strong depletion of minority carriers in the regions outside the QDs. Recombination in these regions, which is the dominant source of the temperature dependence, is thereby suppressed, raising the characteristic temperature T/sub 0/ above 1500 K. Still further enhancement of T/sub 0/ results from the resonant nature of tunneling injection, which reduces the inhomogeneous line broadening by selectively cutting off the nonlasing QDs. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0018-9197 1558-1713 |
DOI: | 10.1109/3.929590 |