Intracavity frequency doubling of an InGaAs diode laser passively Q-switched with GaAs saturable absorber

• Published in: Journal of optics. A, Pure and applied optics Vol. 11; no. 10; p. 105504
• Main Authors: Abdul Ghani, B, Hammadi, M
• Format: Journal Article
• Language: English
• Published: Bristol IOP Publishing 01.10.2009; Institute of Physics
• Subjects: Diode lasers; Dynamical systems; Dynamics; Exact sciences and technology; Frequency conversion ; harmonic generation, including high-order harmonic generation; Frequency doubling; Fundamental areas of phenomenology (including applications); Gallium arsenide; Gallium arsenides; Indium gallium arsenides; Laser optical systems: design and operation; Lasers; Mathematical models; Nonlinear optics; Optical susceptibility, hyperpolarizability; Optics; Physics; Q-switching; Semiconductor lasers; laser diodes; Phosphates; Intracavity frequency doubling; IFD; Laser diodes; Pulsed lasers; Potassium Compounds; InGaAs diode laser; Semiconductor lasers; passively Q-switched; Two photon absorption; Indium Arsenides; Quaternary compounds; Nonlinear optics; ps range; Titanyl Compounds; Second harmonic generation; Saturable absorbers; Ternary compounds; UaAs saturable absorber; Gallium Arsenides; Rate equation; computational model; Optical frequency conversion; Q switched laser; III-V semiconductors
• ISSN: 1464-4258; 1741-3567
• DOI: 10.1088/1464-4258/11/10/105504

A mathematical model describing the dynamic emission of the intracavity frequency doubling (IFD) of a Q-switched InGaAs/KTP diode laser with a GaAs saturable absorber has been developed. The suggested model describes the temporal behavior of the diode laser system, GaAs saturable absorber and the KTP crystal.