Design of AlGaN-based quantum structures for low threshold UVC lasers

The influence of the polarization field on the emission properties of the AlGaN-based quantum structures grown on AlN substrates was investigated as a function of well width, barrier width, and barrier height. A thin AlGaN well and a thin AlN barrier design reduced the polarization field to ∼0.5 MV/...

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Bibliographic Details
Published inJournal of applied physics Vol. 126; no. 22
Main Authors Guo, Qiang, Kirste, Ronny, Mita, Seiji, Tweedie, James, Reddy, Pramod, Moody, Baxter, Guan, Yan, Washiyama, Shun, Klump, Andrew, Sitar, Zlatko, Collazo, Ramón
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 14.12.2019
Subjects
Aluminum gallium nitrides
Applied physics
Carrier injection
Optical pumping
Polarization
Quantum phenomena
Substrates
Threshold currents
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Summary:The influence of the polarization field on the emission properties of the AlGaN-based quantum structures grown on AlN substrates was investigated as a function of well width, barrier width, and barrier height. A thin AlGaN well and a thin AlN barrier design reduced the polarization field to ∼0.5 MV/cm, resulting in an ultralow laser threshold of 3 kW/cm2 in an optically pumped configuration. These experimental results were used to validate the simulation. In the next step, a structure with Al0.7Ga0.3N barriers was designed to support carrier injection with a minimal loss in optical performance. This structure showed a threshold of 7 kW/cm2 under optical pumping and an estimated threshold current of 8 kA/cm2 for the electric injection.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.5125256