Bilayer MoS2 quantum dots with tunable magnetism and spin

Defects can alter the electronic, magnetic and spintronic properties of single- and few-layer MoS2 which are two-dimensional semiconductors with nonzero bandgaps. Here we discover by first-principles calculations with density functional theory that stacking faults with different rotational angles in...

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Bibliographic Details
Published inAIP advances Vol. 8; no. 11; pp. 115103 - 115103-9
Main Authors Yang, Hongping, Ouyang, Wengen, Yan, Xingxu, Li, Zuocheng, Yu, Rong, Yuan, Wenjuan, Luo, Jun, Zhu, Jing
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 01.11.2018
AIP Publishing LLC
Subjects
Bilayers
Density functional theory
Electron spin
Energy levels
First principles
Magnetic properties
Magnetism
Molybdenum disulfide
Optoelectronics
Quantum dots
Quantum theory
Spintronics
Stacking faults
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Summary:Defects can alter the electronic, magnetic and spintronic properties of single- and few-layer MoS2 which are two-dimensional semiconductors with nonzero bandgaps. Here we discover by first-principles calculations with density functional theory that stacking faults with different rotational angles in bilayer MoS2 quantum dots modulate quantitatively the magnetism of the dots and the distributions of the spins and energy levels in their electronic structures. Our results suggest an avenue to design and tailor MoS2 quantum dots for electronics, optoelectronics, magnetics and spintronics.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.5045531