Back-to-back Schottky junction photodetectors based on CVD grown CsPbBr3 microcrystalline striped films

• Published in: AIP advances Vol. 9; no. 12; pp. 125039 - 125039-7
• Main Authors: Cui, Di, Tian, Cancan, Wang, Yunpeng, Wang, Fei, Yang, Zhe, Mei, Jingjing, Liu, Hongzhen, Zhao, Dongxu
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 01.12.2019; AIP Publishing LLC
• Subjects: Cesium; Chemical vapor deposition; Crystal growth; Electrodes; Indium tin oxides; Lead compounds; Metal halides; Microcrystals; Organic chemistry; Perovskites; Photometers; Threshold voltage
• ISSN: 2158-3226; 2158-3226
• DOI: 10.1063/1.5114664

In recent years, a new type of lead halide perovskite has attracted a lot of attention for next-generation photodetectors (PDs) with high responsivity, good detectivity, and fast photoresponse speed. Specifically, cesium based all-organic perovskites exhibit better photostability and therefore have achieved increasing success in PDs recently. For reducing the leak current and increasing the response speed of photoconductive PDs, back-to-back Schottky junction PD is designed and fabricated through a direct growth approach of CsPbBr3 microcrystal (MC) films on indium tin oxide (ITO) electrodes by the chemical vapor deposition (CVD) method. Due to the enhanced Schottky barrier height and threshold voltage between CsPbBr3 and ITO electrodes, the PD exhibits the on/off ratio of up to 104, peak responsivity of 3.9 AW−1, detectivity of 3.8 × 1012, and fast response speed of 0.22 ms (rise time) and 0.45 ms (decay time). In addition, the stability of PD is also enhanced by the high crystal quality of CVD grown CsPbBr3 MCs.