Extended-wavelength InGaAsSb infrared unipolar barrier detectors

• Published in: AIP advances Vol. 8; no. 9; pp. 095106 - 095106-6
• Main Authors: Hao, Hongyue, Wang, Guowei, Han, Xi, Jiang, Dongwei, Sun, Yaoyao, Guo, Chunyan, Xiang, Wei, Xu, Yingqiang, Niu, Zhichuan
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 01.09.2018; AIP Publishing LLC
• Subjects: Barriers; Bias; Dark current; Infrared detectors; Lattice matching; Sensors

We presented an extended-wavelength InGaAsSb infrared unipolar barrier detector working at room temperature. The detector with GaSb lattice-matched InGaAsSb absorb layer and AlGaAsSb unipolar barrier can achieve high material quality and low dark current. The dark current density was 2.29×10-5 A/cm2...