Extended-wavelength InGaAsSb infrared unipolar barrier detectors

• Published in: AIP advances Vol. 8; no. 9; pp. 095106 - 095106-6
• Main Authors: Hao, Hongyue, Wang, Guowei, Han, Xi, Jiang, Dongwei, Sun, Yaoyao, Guo, Chunyan, Xiang, Wei, Xu, Yingqiang, Niu, Zhichuan
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 01.09.2018; AIP Publishing LLC
• Subjects: Barriers; Bias; Dark current; Infrared detectors; Lattice matching; Sensors
• ISSN: 2158-3226; 2158-3226
• DOI: 10.1063/1.5026839

We presented an extended-wavelength InGaAsSb infrared unipolar barrier detector working at room temperature. The detector with GaSb lattice-matched InGaAsSb absorb layer and AlGaAsSb unipolar barrier can achieve high material quality and low dark current. The dark current density was 2.29×10-5 A/cm2 at 0 bias at 77K. At room temperature the dark current at 0 bias was 4×10-3 A/cm2 and the R0A is high to 44 Ω · cm2. We fabricated the cone arrays in the InGaAsSb absorb layer to reduce the reflection of the radiation and extend the spectrum response to visible area. The extended-wavelength detector had the response from the wavelength of 0.4 μm. Further experiment showed the cone arrays also reduced the dark current of the detector at room temperature.