Extended-wavelength InGaAsSb infrared unipolar barrier detectors

We presented an extended-wavelength InGaAsSb infrared unipolar barrier detector working at room temperature. The detector with GaSb lattice-matched InGaAsSb absorb layer and AlGaAsSb unipolar barrier can achieve high material quality and low dark current. The dark current density was 2.29×10-5 A/cm2...

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Published inAIP advances Vol. 8; no. 9; pp. 095106 - 095106-6
Main Authors Hao, Hongyue, Wang, Guowei, Han, Xi, Jiang, Dongwei, Sun, Yaoyao, Guo, Chunyan, Xiang, Wei, Xu, Yingqiang, Niu, Zhichuan
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 01.09.2018
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Abstract We presented an extended-wavelength InGaAsSb infrared unipolar barrier detector working at room temperature. The detector with GaSb lattice-matched InGaAsSb absorb layer and AlGaAsSb unipolar barrier can achieve high material quality and low dark current. The dark current density was 2.29×10-5 A/cm2 at 0 bias at 77K. At room temperature the dark current at 0 bias was 4×10-3 A/cm2 and the R0A is high to 44 Ω · cm2. We fabricated the cone arrays in the InGaAsSb absorb layer to reduce the reflection of the radiation and extend the spectrum response to visible area. The extended-wavelength detector had the response from the wavelength of 0.4 μm. Further experiment showed the cone arrays also reduced the dark current of the detector at room temperature.
AbstractList We presented an extended-wavelength InGaAsSb infrared unipolar barrier detector working at room temperature. The detector with GaSb lattice-matched InGaAsSb absorb layer and AlGaAsSb unipolar barrier can achieve high material quality and low dark current. The dark current density was 2.29×10-5 A/cm2 at 0 bias at 77K. At room temperature the dark current at 0 bias was 4×10-3 A/cm2 and the R0A is high to 44 Ω · cm2. We fabricated the cone arrays in the InGaAsSb absorb layer to reduce the reflection of the radiation and extend the spectrum response to visible area. The extended-wavelength detector had the response from the wavelength of 0.4 μm. Further experiment showed the cone arrays also reduced the dark current of the detector at room temperature.
Author Xiang, Wei
Han, Xi
Sun, Yaoyao
Hao, Hongyue
Wang, Guowei
Guo, Chunyan
Jiang, Dongwei
Niu, Zhichuan
Xu, Yingqiang
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Snippet We presented an extended-wavelength InGaAsSb infrared unipolar barrier detector working at room temperature. The detector with GaSb lattice-matched InGaAsSb...
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StartPage 095106
SubjectTerms Barriers
Bias
Dark current
Infrared detectors
Lattice matching
Sensors
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Title Extended-wavelength InGaAsSb infrared unipolar barrier detectors
URI http://dx.doi.org/10.1063/1.5026839
https://www.proquest.com/docview/2103250419
https://doaj.org/article/bf85970b59f74b3c80c3fdbddff8e58e
Volume 8
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linkProvider Directory of Open Access Journals
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