Short time helium annealing for solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors

In this paper, the short time annealing effects on the solution-processed amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) were studied as a function of different ambient conditions. By comparing the effects of various inert gases as He, Ar, and N2 on the a-IGZO TFTs, it was...

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Bibliographic Details
Published inAIP advances Vol. 8; no. 8; pp. 085206 - 085206-7
Main Authors Lee, Seung-Un, Jeong, Jaewook
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 01.08.2018
AIP Publishing LLC
Subjects
Analogies
Annealing
Gallium
Helium
Indium
Indium gallium zinc oxide
Organic chemistry
Rare gases
Semiconductor devices
Temperature dependence
Thin film transistors
Transistors
Zinc oxide
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Summary:In this paper, the short time annealing effects on the solution-processed amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) were studied as a function of different ambient conditions. By comparing the effects of various inert gases as He, Ar, and N2 on the a-IGZO TFTs, it was found that the He-annealed TFTs prepared over a short annealing time of 30 min performed comparably to the 120 min N2-annealed samples. Similarities in the temperature dependency of the electrical characteristics of the He-annealed TFTs and the N2-annealed TFTs were also observed. These similarities are attributed to the high thermal speed of the He atoms, leading to a fast annealing effect. X-ray photoelectron spectroscopy results indicate that the superior performance of the short time He-annealed TFT does not originate from the difference in chemical residue such as OH-, but from the difference in active layer density.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.5040019