Localized tail state distribution and hopping transport in ultrathin zinc-tin-oxide thin film transistor

• Published in: Applied physics letters Vol. 110; no. 2
• Main Authors: Li, Jeng-Ting, Liu, Li-Chih, Chen, Jen-Sue, Jeng, Jiann-Shing, Liao, Po-Yung, Chiang, Hsiao-Cheng, Chang, Ting-Chang, Nugraha, Mohamad Insan, Loi, Maria Antonietta
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 09.01.2017
• Subjects: Applied physics; Carrier density; Carrier transport; Conduction bands; Dependence; Energy distribution; Thin films; Tin oxides; Transistors
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.4973992

Carrier transport properties of solution processed ultra thin (4 nm) zinc-tin oxide (ZTO) thin film transistor are investigated based on its transfer characteristics measured at the temperature ranging from 310 K to 77 K. As temperature decreases, the transfer curves show a parellel shift toward more postive voltages. The conduction mechanism of ultra-thin ZTO film and its connection to the density of band tail states have been substantiated by two approaches, including fitting logarithm drain current (log ID) to T−1/3 at 310 K to 77 K according to the two-dimensional Mott variable range hopping theory and the extraction of density of localized tail states through the energy distribution of trapped carrier density. The linear dependency of log ID vs. T−1/3 indicates that the dominant carrier transport mechanism in ZTO is the variable range hopping. The extracted value of density of tail states at the conduction band minimum is 4.75 × 1020 cm−3 eV−1 through the energy distribution of trapped carrier density. The high density of localized tail states in the ultra thin ZTO film is the key factor leading to the room-temperature hopping transport of carriers among localized tail states.