Fabrication of a freestanding boron nitride single layer and its defect assignments

A freestanding single layer of hexagonal boron nitride (h-BN) has been successfully fabricated by controlled energetic electron irradiation through a layer-by-layer sputtering process. We have successfully resolved atomic defects in h-BN with triangle shapes by means of an aberration corrected high-...

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Bibliographic Details
Published inPhysical review letters Vol. 102; no. 19; p. 195505
Main Authors Jin, Chuanhong, Lin, Fang, Suenaga, Kazu, Iijima, Sumio
Format Journal Article
LanguageEnglish
Published United States 15.05.2009
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Summary:A freestanding single layer of hexagonal boron nitride (h-BN) has been successfully fabricated by controlled energetic electron irradiation through a layer-by-layer sputtering process. We have successfully resolved atomic defects in h-BN with triangle shapes by means of an aberration corrected high-resolution transmission electron microscopy with exit-wave reconstruction. Boron monovacancies are found to be preferably formed and the dominating zigzag-type edges are proved to be nitrogen terminated.
ISSN:0031-9007
DOI:10.1103/physrevlett.102.195505