Continuously-tuned tunneling behaviors of ferroelectric tunnel junctions based on BaTiO3/La0.67Sr0.33MnO3 heterostructure

In this work, we fabricate BaTiO3/La0.67Sr0.33MnO3 (BTO/LSMO) ferroelectric tunnel junction on (001) SrTiO3 substrate by pulsed laser deposition method. Combining piezoresponse force and conductive-tip atomic force microscopy, we demonstrate robust and reproducible polarization-controlled tunneling...

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Bibliographic Details
Published inAIP advances Vol. 4; no. 5; pp. 057106 - 057106-6
Main Authors Ou, Xin, Xu, Bo, Gong, Changjie, Lan, Xuexin, Yin, Qiaonan, Xia, Yidong, Yin, Jiang, Liu, Zhiguo
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 01.05.2014
AIP Publishing LLC
Subjects
Atomic force microscopy
Barium titanates
Deoxidizing
Domains
Ferroelectric materials
Ferroelectricity
Heterostructures
Pulsed laser deposition
Pulsed lasers
Robust control
Strontium titanates
Substrates
Tunnel junctions
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Summary:In this work, we fabricate BaTiO3/La0.67Sr0.33MnO3 (BTO/LSMO) ferroelectric tunnel junction on (001) SrTiO3 substrate by pulsed laser deposition method. Combining piezoresponse force and conductive-tip atomic force microscopy, we demonstrate robust and reproducible polarization-controlled tunneling behaviors with the resulting tunneling electroresistance value reaching about 102 in ultrathin BTO films (∼1.2 nm) at room temperature. Moreover, local poling areas with different conductivity are finally achieved by controlling the relative proportion of upward and downward domains, and different poling areas exhibit stable transport properties.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4876234