Continuously-tuned tunneling behaviors of ferroelectric tunnel junctions based on BaTiO3/La0.67Sr0.33MnO3 heterostructure
In this work, we fabricate BaTiO3/La0.67Sr0.33MnO3 (BTO/LSMO) ferroelectric tunnel junction on (001) SrTiO3 substrate by pulsed laser deposition method. Combining piezoresponse force and conductive-tip atomic force microscopy, we demonstrate robust and reproducible polarization-controlled tunneling...
Saved in:
Published in | AIP advances Vol. 4; no. 5; pp. 057106 - 057106-6 |
---|---|
Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Melville
American Institute of Physics
01.05.2014
AIP Publishing LLC |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | In this work, we fabricate BaTiO3/La0.67Sr0.33MnO3 (BTO/LSMO) ferroelectric tunnel junction on (001) SrTiO3 substrate by pulsed laser deposition method. Combining piezoresponse force and conductive-tip atomic force microscopy, we demonstrate robust and reproducible polarization-controlled tunneling behaviors with the resulting tunneling electroresistance value reaching about 102 in ultrathin BTO films (∼1.2 nm) at room temperature. Moreover, local poling areas with different conductivity are finally achieved by controlling the relative proportion of upward and downward domains, and different poling areas exhibit stable transport properties. |
---|---|
ISSN: | 2158-3226 2158-3226 |
DOI: | 10.1063/1.4876234 |