Growth of InN hexagonal microdisks

InN hexagonal thin wurtzite disks were grown on γ-LiAlO2 by plasma-assisted molecular-beam epitaxy at low temperature (470oC). The ( 000 1 ¯ ) InN thin disk was established with the capture of N atoms by the β ¯ -dangling bonds of most-outside In atoms, and then the lateral over-growth of the In ato...

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Published inAIP advances Vol. 6; no. 8; pp. 085015 - 085015-7
Main Authors Yang, Chen-Chi, Lo, Ikai, Hu, Chia-Hsuan, Huang, Hui-Chun, Chou, Mitch M. C.
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 01.08.2016
AIP Publishing LLC
Subjects
Disks
Epitaxial growth
Molecular beam epitaxy
Transmission electron microscopy
Wurtzite
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Summary:InN hexagonal thin wurtzite disks were grown on γ-LiAlO2 by plasma-assisted molecular-beam epitaxy at low temperature (470oC). The ( 000 1 ¯ ) InN thin disk was established with the capture of N atoms by the β ¯ -dangling bonds of most-outside In atoms, and then the lateral over-growth of the In atoms were caught by the β ¯ -dangling bonds of the N atoms. From the analyses of high-resolution transmission electron microscopy, the lateral over-grown width was extended to three unit cells at [ 1 1 ¯ 00 ]InN direction for a unit step-layer, resulting in an oblique surface with 73o off c -axis.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4961699