Temperature and pressure dependence of carrier recombination processes in GaAsSb/GaAs quantum well lasers

We investigated the temperature and pressure dependence of carrier recombination processes occurring in GaAsSb edge‐emitting lasers operating near 1.3 μm. Below ∼100 K, the threshold current, I th, is dominated by the radiative current, I rad, and is proportional to temperature, T. However, above 10...

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Published inPhysica Status Solidi (b) Vol. 244; no. 1; pp. 197 - 202
Main Authors Hild, Konstanze, Sweeney, Stephen J., Marko, Igor P., Jin, Shirong R., Johnson, Shane R., Chaparro, Sergio A., Yu, Shuiqing, Zhang, Yong-Hang
Format Journal Article Conference Proceeding
LanguageEnglish
Published Berlin WILEY-VCH Verlag 01.01.2007
WILEY‐VCH Verlag
Wiley
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Summary:We investigated the temperature and pressure dependence of carrier recombination processes occurring in GaAsSb edge‐emitting lasers operating near 1.3 μm. Below ∼100 K, the threshold current, I th, is dominated by the radiative current, I rad, and is proportional to temperature, T. However, above 100 K, non‐radiative recombination increases abruptly such that by 125 K it accounts for 40% of I th. From high pressure measurements at this temperature, we find that the non‐radiative current decreases with increasing pressure, consistent with the presence of Auger recombination. At room temperature, non‐radiative recombination accounts for ∼90% I th and gives rise to a super‐linear temperature dependence of I th, in spite of the fact that I rad ∝ T. At room temperature the non‐radiative current increases with increasing pressure, indicating that under ambient operating conditions, the devices are also limited by carrier leakage into the Γ‐minimum of the GaAs barriers and possibly also into the X‐minima of the GaAsP confining layers. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Bibliography:ark:/67375/WNG-H583RV3N-3
EPSRC (UK)
ArticleID:PSSB200672571
istex:88C70DF5D9DD27B3EA1FB16F1B0F9E35561A197B
SourceType-Scholarly Journals-2
ObjectType-Feature-2
ObjectType-Conference Paper-1
content type line 23
SourceType-Conference Papers & Proceedings-1
ObjectType-Article-3
ISSN:0370-1972
1521-3951
DOI:10.1002/pssb.200672571