杨银堂, 高. 胡. (2011). Modeling of polycrystalline ZnO thin-film transistors with a consideration of the deep and tail states. Chinese physics B, 20(11), 422-426. https://doi.org/10.1088/1674-1056/20/11/116803
Chicago Style (17th ed.) Citation杨银堂, 高海霞 胡榕. "Modeling of Polycrystalline ZnO Thin-film Transistors with a Consideration of the Deep and Tail States." Chinese Physics B 20, no. 11 (2011): 422-426. https://doi.org/10.1088/1674-1056/20/11/116803.
MLA (9th ed.) Citation杨银堂, 高海霞 胡榕. "Modeling of Polycrystalline ZnO Thin-film Transistors with a Consideration of the Deep and Tail States." Chinese Physics B, vol. 20, no. 11, 2011, pp. 422-426, https://doi.org/10.1088/1674-1056/20/11/116803.
Warning: These citations may not always be 100% accurate.