Modeling of polycrystalline ZnO thin-film transistors with a consideration of the deep and tail states

We report a model of the carrier transport and the subgap density of states in a polycrystalline ZnO film for simulating a polycrystalline ZnO thin film transistor. This simple model considering the deep and the band tail states reproduces well the characteristics of polycrystalline ZnO thin film tr...

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Bibliographic Details
Published inChinese physics B Vol. 20; no. 11; pp. 422 - 426
Main Author 高海霞 胡榕 杨银堂
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.11.2011
Subjects
Carrier transport
Computer simulation
Defects
Mathematical models
Semiconductor devices
Thin film transistors
Transistors
Zinc oxide
ZnO薄膜
多晶
审议
尾部
建模
深部
薄膜晶体管
输运模型
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ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/20/11/116803

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Summary:We report a model of the carrier transport and the subgap density of states in a polycrystalline ZnO film for simulating a polycrystalline ZnO thin film transistor. This simple model considering the deep and the band tail states reproduces well the characteristics of polycrystalline ZnO thin film transistors. Furthermore, using the developed model, we study the effects of defect parameters on the electrical performances of the polycrystalline ZnO thin film transistors.
Bibliography:Gao Hai-Xia,Hu Rong,Yang Yin-Tang（School of Microelectronics, Xidian University, Xi＇an 710071 China）
modeling; ZnO thin film transistor; deep state; band tail
11-5639/O4
We report a model of the carrier transport and the subgap density of states in a polycrystalline ZnO film for simulating a polycrystalline ZnO thin film transistor. This simple model considering the deep and the band tail states reproduces well the characteristics of polycrystalline ZnO thin film transistors. Furthermore, using the developed model, we study the effects of defect parameters on the electrical performances of the polycrystalline ZnO thin film transistors.
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ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/20/11/116803