Research on the electrical characteristics of an organic thin-film field-effect transistor based on alternating-current resistance

• Published in: Chinese physics B Vol. 20; no. 12; pp. 385 - 388
• Main Author: 陈跃宁 徐征 赵谡玲 尹飞飞 张成文 焦碧媛 董宇航
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.12.2011
• Subjects: Alternating current; Devices; Electric potential; Electrodes; Field effect transistors; Semiconductor devices; Thin films; Trends; Volt-ampere characteristics; Voltage; 交流电流; 交流电阻; 基础; 实验数据; 有机薄膜场效应晶体管; 电气特性; 电阻值; 设备使用
• ISSN: 1674-1056; 2058-3834; 1741-4199
• DOI: 10.1088/1674-1056/20/12/127303

In this article, an organic thin-film field-effect transistor （OTFFET） with top-gate and bottom-contact geometry based on pentacene as the active layer is fabricated. The experimental data of the I-V are obtained from the OTFFET device. The alternating-current （AC） resistance value of the OTFFET device is calculated using the derivation method from the experimental data, and the AC resistance trend curves of the OTFFET device are obtained with the region fitting method. We analyse the characteristics of the OTFFET device with an AC resistance trend curve. To discover whether it has a high resistance, it is proposed to judge the region of the source/drain voltage （VDs） less than the transition voltage, thereby determining whether the contact between the metal electrode and the organic semiconductor layer of the OTFFET device is Ohmic or non-Ohmic. The theoretical analysis shows that the field-effect mobility and the AC resistance are in reverse proportion. Therefore, we point out that reducing AC resistance is necessary if field-effect mobility is to be improved.