Improvement in the performance of an InGaZnO thin-film transistor by controlling interface trap densities between the insulator and active layer

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Bibliographic Details
Published inSemiconductor science and technology Vol. 26; no. 8; p. 085012
Main Authors Trinh, Thanh Thuy, Nguyen, Van Duy, Ryu, Kyungyul, Jang, Kyungsoo, Lee, Wonbeak, Baek, Seungshin, Raja, Jayapal, Yi, Junsin
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.08.2011
Institute of Physics
Subjects
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Performance evaluation
High strength current
Interface state
Amorphous material
Density of states
Oxygen
Annealing
Heat treatment
Dielectric materials
Vacancy
High field effects
Active layer
Radiofrequency
Thin film
Charge carrier trapping
Thin film transistor
Cathodic sputtering
X-ray photoelectron spectra
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/26/8/085012