High-power passively mode-locked laser at 1062.4  nm based on Nd:LaGGG disordered crystal

A diode-pumped passively continuous-wave mode-locked Nd:(La(x)Gd(1-x))3Ga5O12 (Nd:LaGGG) laser at 1062.4 nm with a semiconductor saturable absorber mirror was demonstrated for the first time, to the best of our knowledge. Pulses with duration of 12.78 ps were produced at a repetition rate of 59.8 MH...

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Published inApplied optics. Optical technology and biomedical optics Vol. 54; no. 8; p. 2118
Main Authors Su, Xiancui, Zhao, Ruwei, Zhang, Baitao, Jia, Zhitai, Hou, Jia, He, Jingliang
Format Journal Article
LanguageEnglish
Published United States 10.03.2015
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Summary:A diode-pumped passively continuous-wave mode-locked Nd:(La(x)Gd(1-x))3Ga5O12 (Nd:LaGGG) laser at 1062.4 nm with a semiconductor saturable absorber mirror was demonstrated for the first time, to the best of our knowledge. Pulses with duration of 12.78 ps were produced at a repetition rate of 59.8 MHz. A maximum average mode-locked output power of 3.18 W was obtained at the absorbed pumped power of 10.12 W, corresponding to a slope efficiency of 35.7% and a peak power of 4.2 kW. As far as we know, this is the highest power obtained in the passively mode-locking operation with Nd3+-doped disordered garnet crystals.
ISSN:2155-3165
DOI:10.1364/ao.54.002118