Impact of channel width on back biasing effect in tri-gate MOSFET

• Published in: Microelectronic engineering Vol. 114; pp. 91 - 97
• Main Authors: Park, So Jeong, Jeon, Dae-Young, Montès, Laurent, Barraud, Sylvain, Kim, Gyu-Tae, Ghibaudo, Gérard
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.02.2014; Elsevier
• Subjects: Applied sciences; Back bias; Bias; Channel width variation; Channels; Computer simulation; Devices; Electronics; Electrostatic coupling; Engineering Sciences; Exact sciences and technology; Fractures; Mathematical models; Mechanical properties and methods of testing. Rheology. Fracture mechanics. Tribology; Metal oxide semiconductors; Metals. Metallurgy; Micro and nanotechnologies; Microelectronics; MOSFETs; N-type semiconductors; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; SOI (silicon on insulator); Transistors; Tri-gate MOSFET; Tri-gate MOSFET; Electrostatic coupling; Channel width variation; SOI (silicon on insulator); Back bias; Voltage threshold; MOS technology; MOSFET; Multiple gate transistor; Transistor gate; Degradation; Silicon on insulator technology; Gate oxide; n type semiconductor; Numerical simulation; Vertical channel; Planar device; Interface; Damaging; Back bias Channel; width variation
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2013.09.016

[Display omitted] •The electrical properties showed back bias effect in narrow device and wide device.•Back biasing effect is suppressed in narrow device with strong front gate control.•Lower mobility in narrow device is due to the poorer quality of front interface.•Back biasing effect was modeled with 2-D numerical simulation.•The potential profile showed weak impact of back biasing in narrow device. The impact of channel width on back biasing effect in n-type tri-gate metal-oxide semiconductor field effect transistor (MOSFET) on silicon-on-insulator (SOI) material was investigated. In narrow device (Wtop_eff=20nm), the relatively high control of front gate on overall channel leads to the reduced electrostatic coupling between back and front channels as well as the suppression of back bias effects on both channel threshold voltage and the effective mobility, compared to the planar device (Wtop_eff=170nm). The lower effective mobility with back bias in narrow device was attributed to poorer front channel interface, and, to significant effect of sidewall mobility. The back biasing effect in tri-gate MOSFET was successfully modeled with 2-D numerical simulation. Through the simulation, the mobility results were interpreted as the consequence of two kinds of mobility degradations, i.e. different mobility attenuation along lateral and vertical directions of channel and additional mobility degradation in narrow device due to the effect of sidewall mobility. The potential profile extracted from numerical simulation provides strong evidence showing different degree of electrostatic coupling in narrow device and planar device due to a relative influence of front gate bias control over channels.