Influence of temperature and wavelength on the switchable photovoltaic response of a BiFe0.95Mn0.05O3 thin film

The photovoltaic (PV) response of an epitaxial BiFe0.95Mn0.05O3 thin film grown using pulsed laser deposition has been investigated on a broad range of temperature. The wavelength dependent photovoltaic effect shows the contribution of the manganese doping and the presence of vacancies (Bi and O vac...

Full description

Saved in:
Bibliographic Details
Published inJournal of applied physics Vol. 122; no. 21
Main Authors Yousfi, S., Bouyanfif, H., El Marssi, M.
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 07.12.2017
Subjects
Applied physics
Condensed Matter
Conduction heating
Depolarization
Electromigration
Epitaxial growth
Manganese
Open circuit voltage
Photovoltaic cells
Photovoltaic effect
Physics
Pulsed laser deposition
Pulsed lasers
Solar cells
Temperature dependence
Thin films
Vacancies
Online AccessGet full text

Cover

More Information
Summary:The photovoltaic (PV) response of an epitaxial BiFe0.95Mn0.05O3 thin film grown using pulsed laser deposition has been investigated on a broad range of temperature. The wavelength dependent photovoltaic effect shows the contribution of the manganese doping and the presence of vacancies (Bi and O vacancies). The temperature dependent response of the PV response rules out electromigration and/or Schottky barriers as dominant mechanisms. This is corroborated with the observed switchable photovoltaic effect that can be explained either by the depolarizing field or by the bulk photovoltaic effect. In addition, the PV response shows a strong correlation with the low temperature polaronic-like conduction mechanism, and a high open circuit voltage (2.5 V) is detected in the investigated vertical capacitive geometry.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.5002643