High Temperature Growth of Non-polar $a$-Plane GaN Film Grown Using Gallium-Oxide as Ga Source

In this study, we reported a decrease of oxygen concentration and an increase in the growth rate of $a$-plane gallium nitride ($a$-GaN) film grown using Ga 2 O gas and NH 3 gas. The oxygen concentration in $a$-GaN film was decreased with increasing partial pressure of NH 3 and growth temperature. An...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 52; no. 2; pp. 025503 - 025503-3
Main Authors Sumi, Tomoaki, Bu, Yuan, Kitamoto, Akira, Imade, Mamoru, Yoshimura, Masashi, Isemura, Masashi, Mori, Yusuke
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.02.2013
Subjects
Gallium nitrides
Nitrides
Partial pressure
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Summary:In this study, we reported a decrease of oxygen concentration and an increase in the growth rate of $a$-plane gallium nitride ($a$-GaN) film grown using Ga 2 O gas and NH 3 gas. The oxygen concentration in $a$-GaN film was decreased with increasing partial pressure of NH 3 and growth temperature. An $a$-GaN film with the lowest oxygen concentration of $4 \times 10^{18}$ atoms/cm 3 and the growth rate of 18 μm/h was obtained under NH 3 partial pressure of 84 kPa at 1250 °C. We concluded that growth under high partial pressure of NH 3 at high temperature can produce $a$-plane GaN film with a high growth rate and low oxygen concentration.
Bibliography:Morphological changes in $a$-plane GaN film grown under different NH 3 partial pressures and growth temperatures. The grown films with smooth surfaces were obtained under partial pressure of NH 3 at 1200 °C. On the other hand, many pits and grooves were observed in film grown under low partial pressure of NH 3 at 1250 °C. Dependency of oxygen concentration in $a$-GaN film under partial pressure of NH 3 . The oxygen concentration was decreased with increasing partial pressure of NH 3 and growth temperature. Dependency of growth rate on partial pressure of NH 3 at 1200 and 1250 °C. The growth rate was decreased with increasing partial pressure of NH 3 . In contrast, the growth rate was increased with increasing growth temperature. Relationship among oxygen concentration, growth rate and growth temperature. The growth rate was increased and the oxygen concentration was decreased with increasing growth temperature.
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ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.52.025503