Depletion layer and contact capacitance in non-uniformly doped semiconductors

We consider the dependence of the capacitance C of the semiconductor depletion layer versus the contact bias V. When the concentration of doping impurities varies in the plane parallel to the contact, we show that the standard Schottky dependence C exp -2 (V) is no longer a straight line. We compute...

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Bibliographic Details
Published inJournal of physics. D, Applied physics Vol. 35; no. 22; pp. 2988 - 2993
Main Authors Shik, A, Ruda, H E, Pelinovsky, D, Craig, W
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 21.11.2002
Institute of Physics
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
Low-field transport and mobility; piezoresistance
Physics
CV characteristic
Impurity distribution
Semiconductor materials
Impurity density
Variational methods
Depletion layer
Perturbation techniques
Doping
Differential equations
Theoretical study
Non uniform distribution
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Summary:We consider the dependence of the capacitance C of the semiconductor depletion layer versus the contact bias V. When the concentration of doping impurities varies in the plane parallel to the contact, we show that the standard Schottky dependence C exp -2 (V) is no longer a straight line. We compute the effective concentration N(eff) from the slope of the dependence C exp -2 (V) by using the perturbation and variation methods and compare N(eff) with previous theoretical and experimental data. (Author)
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/35/22/313