Stoichiometry and volume dependent transport in lithium ion memristive devices

LixCoO2, a thoroughly studied cathode material used extensively in Li-ion rechargeable batteries, has recently been proposed as a potential candidate for resistive random access memory and neuromorphic system applications. Memristive cells based on LixCoO2 thin films have been grown on Si substrates...

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Bibliographic Details
Published inAIP advances Vol. 8; no. 11; pp. 115211 - 115211-6
Main Authors Orfanidou, Charis M., Ioannou, Panagiotis S., Kyriakides, Evripides, Nicolaou, Christiana, Mihailescu, Cristian N., Nguyen, Van Son, Mai, Van Huy, Schneegans, Olivier, Giapintzakis, John
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 01.11.2018
American Institute of Physics- AIP Publishing LLC
AIP Publishing LLC
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Summary:LixCoO2, a thoroughly studied cathode material used extensively in Li-ion rechargeable batteries, has recently been proposed as a potential candidate for resistive random access memory and neuromorphic system applications. Memristive cells based on LixCoO2 thin films have been grown on Si substrates and two-probe current-voltage measurements were employed to investigate the origin and nature of resistive switching behavior exhibited by these cells. The results indicate that a voltage-driven metal-to-insulator transition of the active LixCoO2 layer is responsible for the resistive switching behavior, which has a homogeneous nature.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.5051568