Theoretical Basis For A New Development Rate Model For Positive Photoresists

A new development rate equation is proposed which is based on an equation derived by Huang, Reiser and Kwei for the concentration dependence of the dissolution rate of acidic resins in aqueous alkaline developers. This equation predicts cessation of development at a critical concentration c*. An S-s...

Full description

Saved in:
Bibliographic Details
Published inJournal of Photopolymer Science and Technology Vol. 10; no. 3; pp. 379 - 385
Main Author Dammel, Ralph R.
Format Journal Article
LanguageEnglish
Published Hiratsuka The Society of Photopolymer Science and Technology(SPST) 1997
Japan Science and Technology Agency
Subjects
AZ resist
development parameters
enhanced Mack model
Huang-Reiser-Kwei equation
Online AccessGet full text

Cover

More Information
Summary:A new development rate equation is proposed which is based on an equation derived by Huang, Reiser and Kwei for the concentration dependence of the dissolution rate of acidic resins in aqueous alkaline developers. This equation predicts cessation of development at a critical concentration c*. An S-shaped function is proposed for the dependence of the critical concentration c* on the normalized sensitizer concentration m of positive-tone resists, and the model is tested with good success on a high speed and a high resolution i-line photoresist.
ISSN:0914-9244
1349-6336
DOI:10.2494/photopolymer.10.379