Layer-Specific Resists for 193nm Lithography

• Published in: Journal of Photopolymer Science and Technology Vol. 13; no. 4; pp. 607 - 615
• Main Authors: Padmanaban, Munirathna, Bae, Jun-Bom, Kim, Woo-Kyu, Kudo, Takanori, Rahman, M. Dalil, Dammel, Ralph R.
• Format: Journal Article
• Language: English
• Published: Hiratsuka The Society of Photopolymer Science and Technology(SPST) 2000; Japan Science and Technology Agency
• Subjects: 193nm resists; AX™1020P; AX™1030P AX™2000P; Layer specific; line width slimming; shelf life
• ISSN: 0914-9244; 1349-6336
• DOI: 10.2494/photopolymer.13.607

Methacrylate polymers containing pendant cyclic groups such as adamantane and main chain cyclo-olefin polymers with or without maleic anhydride have emerged as the polymers of choice for 193nm lithography. We have been optimizing resist formulations containing poly(2-methyladamantyl methacrylate-co-mevalonic lactone methacrylate) as well as copolymers based on derivatives of norbornene and maleic anhydride. Lithographic results so far indicate that the methacrylate containing formulations are particularly advantageous for 1:1 dense lines and contact hole applications, whereas the cyclo-olefin based formulations show superior performance for semi-dense and isolated line applications. It is expected that resist materials based on these chemistries would be used for the first generation device manufacturing. In this paper we would like to present the lithographic results of AZ®EXP AX™ 1020P, AZ®EXP AX™ 1030P, and AZ®EXP AX™2000P resists which have been designed for contact hole, de se and isolated line applications, respectively. In addition, some of the common issues of current 193nm resists are discussed, such as line-width slimming, line-edge roughness and shelf life.